Method of enhancing an etch system
US7838322B1 · kind B1 · utility
46Cited by
6References
16Claims
0Family size
Assignee
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Key dates
| Filing date | Feb 28, 2006 |
| Grant date | Nov 23, 2010 |
| Priority date | — |
| Expiry date | Jan 25, 2029 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB81C2201/0132
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
Systems and techniques for enhanced etch processes. For example, a substrate may be received in an etch chamber, where the substrate comprises a handle layer, a bonding layer in communication with the handle layer, and a device layer in communication with the bonding layer. The device layer may comprise a device layer patterned therein and having a bottom surface, where the bottom surface of the device is attached to the bonding layer. The bonding layer may comprise an oxide annealed at relatively low temperature. A dry etch process may be performed to release the bottom surface of the device from the bonding layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.