Patent · US Active

Method for patterning contact etch stop layers by using a planarization process

US7838354B2 · kind B2 · utility

1Cited by

8References

20Claims

0Family size

Assignee

Advanced Micro Devices, Inc. · US

Inventors

Kai Frohberg · Meißen, DE
Sven Mueller · Rockenberg, DE
Christoph Schwan · Gebhardshain, DE

Key dates

Filing date	Mar 28, 2007
Grant date	Nov 23, 2010
Priority date	—
Expiry date	Aug 31, 2028

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY10S438/97
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

By performing a planarization process, for instance based on a planarization layer, prior to forming a resist mask for selectively removing a portion of a stressed contact etch stop layer, the strain-inducing mechanism of a subsequently deposited further contact etch stop layer may be significantly improved.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.