Method for the manufacture of a semiconductor device and a semiconductor device obtained through it

US7838367B2 · kind B2 · utility

Assignee

• NXP B.V. · NL

Inventors

• Youri Victorovitch Ponomarev · Leuven, BE
• Josine Loo · Leuven, BE

Key dates

• Filing date: Dec 19, 2005
• Grant date: Nov 23, 2010
• Expiry date: May 10, 2027

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/6734

Abstract

The invention relates to a semiconductor device (10) having a semiconductor body (2), comprising a field effect transistor, a first gate dielectric (6A) being formed on a first surface at the location of the channel region (5) and on it a first gate electrode (7), a sunken ion implantation (20) being executed from the first side of the semiconductor body (2) through and on both sides of the first gate electrode (7), which implantation results in a change of property of the silicon below the first gate electrode (7) compared to the silicon on both sides of the gate electrode 7) in a section of the channel region (5) remote from the first gate dielectric (6A), and on the second surface of the semiconductor body (2) a cavity (30) being provided therein by means of selective etching while use is made of the change of property of the silicon. A second gate (6B,8) is deposited in the cavity thus formed. Before the ion implantation (20), a mask (M1) is formed on both sides of the gate electrode (7) and at a distance thereof, whereby after the ion implantation (20) at the location of the mask (M 1) also a change in property of the silicon is obtained. In this way the device (10) can be eas…