Epitaxially coated semiconductor wafer and device and method for producing an epitaxially coated semiconductor wafer

US7838398B2 · kind B2 · utility

Assignee

• Siltronic AG · DE

Inventors

• Reinhard Schauer · Laufen, DE
• Norbert Werner · Dodge City, US

Key dates

• Filing date: Nov 14, 2007
• Grant date: Nov 23, 2010
• Expiry date: Nov 17, 2028

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10T428/24612
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

In a method for producing epitaxially coated semiconductor wafers, a multiplicity of prepared, front side-polished semiconductor wafers are successively coated individually with an epitaxial layer on their polished front sides at temperatures of 800-1200° C. in a reactor, while supporting the prepared semiconductor wafer over a susceptor having a gas-permeable structure, on a ring placed on the susceptor which acts as a thermal buffer between the susceptor and the supported semiconductor wafer, the semiconductor wafer resting on the ring, and its backside facing but not contacting the susceptor, so that gaseous substances are delivered from a region over the backside of the semiconductor wafer by gas diffusion through the susceptor into a region over the backside of the susceptor, the semiconductor wafer contacting the ring only in an edge region of its backside, wherein no stresses measurable by means of photoelastic stress measurement (“SIRD”) occur in the semiconductor wafer.