Mask trimming
US7838426B2 · kind B2 · utility
5Cited by
7References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 20, 2007 |
| Grant date | Nov 23, 2010 |
| Priority date | — |
| Expiry date | May 10, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0338
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for etching a dielectric layer is provided. A patterned mask with mask features is formed over a dielectric layer. The mask has isolated areas and dense areas of the mask features. The mask is trimmed by a plurality of cycles, where each cycle includes depositing a deposition layer, and selectively etching the deposition layer and the patterned mask. The selective etching selectively trims the isolated areas of the mask with respect to the dense areas of the mask. The dielectric layer is etched using the thus trimmed mask. The mask is removed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.