Dielectric layer, method of manufacturing the dielectric layer and method of manufacturing capacitor using the same
US7838438B2 · kind B2 · utility
3Cited by
5References
16Claims
0Family size
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Key dates
| Filing date | Feb 28, 2006 |
| Grant date | Nov 23, 2010 |
| Priority date | — |
| Expiry date | Oct 7, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0228
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A dielectric layer, an MIM capacitor, a method of manufacturing the dielectric layer and a method of manufacturing the MIM capacitor. The method of manufacturing the dielectric layer includes chemically reacting a metal source with different amounts of an oxidizing agent based on the cycle of the chemical reactions in order to control leakage characteristics of the dielectric layer, the electrical characteristics of the dielectric layer, and the dielectric characteristics of the dielectric layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.