Silcon carbide semiconductor device having schottky barrier diode and method for manufacturing the same
US7838888B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 25, 2008 |
| Grant date | Nov 23, 2010 |
| Priority date | — |
| Expiry date | Aug 22, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/126
Abstract
An SiC semiconductor device is provided, which comprises: a substrate made of silicon carbide and having a principal surface; a drift layer made of silicon carbide and disposed on the principal surface; an insulating layer disposed on the drift layer and including an opening; a Schottky electrode contacting with the drift layer through the opening; a termination structure disposed around an outer periphery of the opening; and second conductivity type layers disposed in a surface part of the drift layer, contacting the Schottky electrode, surrounded by the termination structure, and separated from one another. The second conductivity type layers include a center member and ring members. Each ring member surrounds the center member and is arranged substantially in a point symmetric manner with respect to the center member.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.