Semiconductor device having multiple lateral channels and method of forming the same

US7838905B2 · kind B2 · utility

Assignee

• Flextronics International USA, Inc. · US

Inventors

• Berinder Brar · Newbury Park, US
• Wonill Ha · Thousand Oaks, US

Key dates

• Filing date: Feb 21, 2008
• Grant date: Nov 23, 2010
• Expiry date: Jan 1, 2029

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/256

Abstract

A semiconductor device having multiple lateral channels with contacts on opposing surfaces thereof and a method of forming the same. In one embodiment, the semiconductor device includes a conductive substrate having a first contact covering a substantial portion of a bottom surface thereof. The semiconductor device also includes a first lateral channel above the conductive substrate and a second lateral channel above the first lateral channel. The semiconductor device further includes a second contact above the second lateral channel. The semiconductor device still further includes an interconnect that connects the first and second lateral channels to the conductive substrate operable to provide a low resistance coupling between the first contact and the first and second lateral channels.