Magnetic memory device and method for reading magnetic memory cell using spin hall effect
US7839675B2 · kind B2 · utility
14Cited by
1References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 28, 2009 |
| Grant date | Nov 23, 2010 |
| Priority date | — |
| Expiry date | May 21, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/472
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A magnetic memory device includes a substrate for reading and a magnetic memory cell. The substrate has a channel layer. The magnetic memory cell is formed on the substrate and has a magnetized magnetic material that transfers spin data to electrons passing the channel layer. Data stored in the magnetic memory cell are read by a voltage across both side ends of the channel layer that is generated when the electrons passing the channel layer deviate in the widthwise direction of the channel layer by a spin Hall effect.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.