Patent · US Active

Structure for on-chip electromigration monitoring system

US7840916B2 · kind B2 · utility

6Cited by
8References
8Claims
0Family size

Assignee

Inventors

Key dates

Filing dateNov 19, 2007
Grant dateNov 23, 2010
Priority date
Expiry dateFeb 20, 2029

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG01R31/2858
  • WIPO fieldMeasurement
  • WIPO sectorInstruments

Abstract

A design structure embodied in a machine readable medium used in a design process can include apparatus of a semiconductor chip operable to detect an increase in resistance of a monitored element of the semiconductor chip. The design structure can include, for example, a resistive voltage divider circuit operable to output a plurality of reference voltages having different values. A plurality of comparators in the semiconductor chip may be coupled to receive the reference voltages and a monitored voltage representative of a resistance of the monitored element. Each of the comparators may produce an output indicating whether the monitored voltage exceeds the reference voltages, so that the resistance value of the monitored element may be precisely determined.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.