Method of forming a semiconductor device
US7842450B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 28, 2007 |
| Grant date | Nov 30, 2010 |
| Priority date | — |
| Expiry date | Apr 13, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0337
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a semiconductor device includes forming a first mask pattern on a target layer, the first mask pattern exposing a first portion of the target layer, forming an intermediate material layer, including depositing an intermediate material layer film on a side of the first mask pattern and the first portion of the target layer, and thinning the intermediate material layer film to form the intermediate material layer, forming a second mask pattern that exposes a second portion of the intermediate material layer, removing the exposed second portion of the intermediate material layer to expose the target layer, and patterning the target layer using the first and second mask patterns as patterning masks.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.