FinFET and method of manufacturing the same
US7842566B2 · kind B2 · utility
21Cited by
2References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 7, 2007 |
| Grant date | Nov 30, 2010 |
| Priority date | — |
| Expiry date | Jul 28, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/405
Abstract
A FinFET may include a semiconductor fin having a top surface and a sidewall having different crystal planes. A gate dielectric layer on the top surface and on the sidewall has different thicknesses. A gate electrode is formed on the gate dielectric layer across the top surface and sidewall of the semiconductor fin.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.