Flash memory device and method of fabricating the same
US7842569B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 29, 2006 |
| Grant date | Nov 30, 2010 |
| Priority date | — |
| Expiry date | Jul 17, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6891
Abstract
One embodiment of a method of fabricating a flash memory device includes forming a trench mask pattern, which includes a gate insulation pattern and a charge storage pattern stacked in sequence, on a semiconductor substrate; etching the semiconductor substrate using the trench mask pattern as an etch mask to form trenches defining active regions; and sequentially forming lower and upper device isolation patterns in the trench. After sequentially forming an intergate insulation film and a control gate film on the upper device isolation pattern, the control gate film, the intergate insulation pattern and the gloating gate pattern are formed, thereby providing gate lines crossing over the active regions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.