Method for manufacturing a semiconductor substrate including laser annealing

US7842590B2 · kind B2 · utility

Assignee

• Infineon Technologies Austria AG · AT

Inventors

• Thomas Gutt · Taufkirchen, DE
• Frank Umbach · Munich, DE
• Hans Peter Felsl · Munich, DE
• Manfred Pfaffenlehner · Birkenfeld, DE
• Franz-Josef Niedernostheide · Hagen am Teutoburger Wald, DE
• Holger Schulze · Villach, AT

Key dates

• Filing date: Apr 28, 2008
• Grant date: Nov 30, 2010
• Expiry date: Sep 16, 2028

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/13
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method for manufacturing a semiconductor device by laser annealing. One embodiment provides a semiconductor substrate having a first surface and a second surface. The second surface is arranged opposite to the first surface. A first dopant is introduced into the semiconductor substrate at the second surface such that its peak doping concentration in the semiconductor substrate is located at a first depth with respect to the second surface. A second dopant is introduced into the semiconductor surface at the second surface such that its peak doping concentration in the semiconductor substrate is located at a second depth with respect to the second surface, wherein the first depth is larger than the second depth. At least a first laser anneal is performed by directing at least one laser beam pulse onto the second surface to melt the semiconductor substrate, at least in sections, at the second surface.