Thomas Gutt
16Patents
4h-index
26Co-inventors
56Inventor score
Filing activity: Jul 26, 2003 → Feb 27, 2017
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7842590B2 | Method for manufacturing a semiconductor substrate including laser annealing | Electricity | 15 | Active |
| US9613805B1 | Method for forming a semiconductor device | Electricity | 7 | Active |
| US9209109B2 | IGBT with emitter electrode electrically connected with an impurity zone | Electricity | 5 | Active |
| US8450196B2 | Production of an integrated circuit including electrical contact on SiC | Electricity | 5 | Active |
| US8011319B2 | Method for oxidizing a layer, and associated holding devices for a substrate | Emerging Cross-Sectional Technologies | 3 | Active |
| US7851913B2 | Semiconductor device including a power device with first metal layer and second metal layer laterally spaced apart | Electricity | 3 | Active |
| US7723158B2 | Method for producing and cleaning surface-mountable bases with external contacts | Electricity | 2 | Active |
| US7615499B2 | Method for oxidizing a layer, and associated holding devices for a substrate | Emerging Cross-Sectional Technologies | 2 | Expired |
| US9240450B2 | IGBT with emitter electrode electrically connected with impurity zone | Electricity | 1 | Active |
| US10347490B2 | Production of an integrated circuit including electrical contact on SiC | Electricity | 1 | Active |
| US9634108B2 | Method of manufacturing a device by locally heating one or more metalization layers and by means of selective etching | Electricity | 0 | Active |
| US8895422B2 | Production of an integrated circuit including electrical contact on SiC | Electricity | 0 | Active |
| US8475326B2 | Outer plate carrier | Mechanical Engineering; Lighting; Heating | 0 | Active |
| US8541892B2 | Bonding connection between a bonding wire and a power semiconductor chip | Electricity | 0 | Active |
| US9209281B2 | Method of manufacturing a device by locally heating one or more metallization layers and by means of selective etching | Electricity | 0 | Active |
| US9391154B2 | Method of manufacturing a device by locally heating one or more metalization layers and by means of selective etching | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.