Selective formation of a compound comprising a semi-conducting material and a metallic material in a substrate through a germanium oxide layer
US7842612B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Sep 29, 2008 |
| Grant date | Nov 30, 2010 |
| Priority date | — |
| Expiry date | Jul 25, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/0213
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An area made from a compound of a metallic material and semi-conducting material is produced selectively in a substrate made from semi-conducting material by previously forming a germanium oxide layer with a thickness comprised between 3 nm and 5 nm over a predefined part of a surface of the substrate and a silicon oxide layer on the rest of the surface. A metallic layer is deposited on the oxide layers. The metallic material is chosen such that its oxide is thermodynamically more stable than germanium oxide and thermodynamically less stable than silicon oxide. Thermal annealing is then performed to obtain reduction of the germanium oxide by said metallic material followed by formation of the compound, at the level of said part of the surface of the substrate. The metallic layer is then removed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.