Method and structure of integrated rhodium contacts with copper interconnects
US7843067B2 · kind B2 · utility
1Cited by
2References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 24, 2008 |
| Grant date | Nov 30, 2010 |
| Priority date | — |
| Expiry date | Dec 4, 2028 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/26
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present disclosure relates to a microelectronic structure and the manufacture of the microelectronic structure. Specifically, the disclosure relates to an interconnect barrier layer between a rhodium contact structure and a copper interconnect structure in a microelectronic structure. The microelectronic structure provides for low resistance in microelectronic devices.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.