Plasma processing apparatus and method
US7846293B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 30, 2005 |
| Grant date | Dec 7, 2010 |
| Priority date | — |
| Expiry date | Jun 11, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/3266
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A plasma processing apparatus includes a worktable in a process chamber to horizontally place a target substrate thereon. A plasma generation space is defined above and around the worktable within the process chamber. The plasma generation space includes a peripheral plasma region and a main plasma region respectively located outside and inside an outer edge of the target substrate placed on the worktable. The apparatus further includes a magnetic field forming mechanism configured to form a magnetic field within the peripheral plasma region. The magnetic field includes magnetic force lines extending through the peripheral plasma region between a start position and an end position, at least one of which is located radially inside a sidewall of the process chamber.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.