Method for removing a halogen-containing residue
US7846347B2 · kind B2 · utility
0Cited by
21References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 19, 2007 |
| Grant date | Dec 7, 2010 |
| Priority date | — |
| Expiry date | Jul 1, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31116
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The invention provides for a method and integrated system for removing a halogen-containing residue from a substrate comprising etching the substrate, heating the substrate and exposing the heated substrate to a plasma that removes the halogen-containing residue.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.