Pattern forming method and phase shift mask manufacturing method
US7846617B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Feb 6, 2007 |
| Grant date | Dec 7, 2010 |
| Priority date | — |
| Expiry date | Jan 23, 2028 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/32
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A light-shielding layer over a transparent substrate is processed into a predetermined pattern by first etching and then a recess is formed in an underlying layer below the light-shielding layer by second etching using at least the light-shielding layer as a mask. Subsequently, a defect inspection of the recess is performed. If, as a result of the inspection, a residue defect is detected at the recess otherwise formed in the underlying layer below the light-shielding layer, defect portion data of a pattern of a region including a residue-defect portion is produced and a repairing resist pattern is formed on the light-shielding layer based on the defect portion data. Then, third etching is applied to the underlying layer below the light-shielding layer using the light-shielding layer and the repairing resist pattern as a mask, thereby repairing the residue-defect portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.