Method and device for monitoring a heat treatment of a microtechnological substrate
US7846749B2 · kind B2 · utility
0Cited by
8References
14Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jun 11, 2007 |
| Grant date | Dec 7, 2010 |
| Priority date | — |
| Expiry date | Jun 11, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76254
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of monitoring a heat treatment of a microtechnological substrate includes placement of the substrate to be treated in a heating zone and applying a heat treatment to the substrate, under predetermined temperature conditions, while monitoring the change over the course of time in the vibratory state of the substrate, and detecting a fracture in the substrate by detecting a peak characteristic in the vibratory state over the course of time.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.