Diode array and method of making thereof
US7846782B2 · kind B2 · utility
13Cited by
33References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 28, 2007 |
| Grant date | Dec 7, 2010 |
| Priority date | — |
| Expiry date | Nov 18, 2028 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2013/0073
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method of making a non-volatile memory device includes providing a substrate having a substrate surface, and forming a non-volatile memory array over the substrate surface. The non-volatile memory array includes an array of semiconductor diodes, and each semiconductor diode of the array of semiconductor diodes is disposed substantially parallel to the substrate surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.