Inventor · Santa Clara, CA, US

Mark Clark

43Patents
9h-index
32Co-inventors
71Inventor score

Filing activity: Dec 31, 2002 → Aug 2, 2016

Most-cited inventions

PatentTitleAreaCited byStatus
US7615439B1 Damascene process for carbon memory element with MIIM diode Electricity 97 Active
US7824956B2 Memory cell that employs a selectively grown reversible resistance-switching element and methods of forming the same Electricity 96 Active
US8946667B1 Barrier structure for a silver based RRAM and method Electricity 24 Active
US9166163B2 Sub-oxide interface layer for two-terminal memory Electricity 23 Active
US8558220B2 Memory cell that employs a selectively fabricated carbon nano-tube reversible resistance-switching element formed over a bottom conductor and methods of forming the same Electricity 16 Active
US7846782B2 Diode array and method of making thereof Physics 13 Active
US7897453B2 Dual insulating layer diode with asymmetric interface state and method of fabrication Electricity 13 Active
US6815077B1 Low temperature, low-resistivity heavily doped p-type polysilicon deposition Electricity 12 Expired
US8467224B2 Damascene integration methods for graphitic films in three-dimensional memories and memories formed therefrom Electricity 9 Active
US9412790B1 Scalable RRAM device architecture for a non-volatile memory device and method Electricity 8 Active
US9583701B1 Methods for fabricating resistive memory device switching material using ion implantation Electricity 8 Active
US9252191B2 Seed layer for a p+ silicon germanium material for a non-volatile memory device and method Electricity 7 Active
US7902537B2 Memory cell that employs a selectively grown reversible resistance-switching element and methods of forming the same Electricity 5 Active
US8236623B2 Memory cell that employs a selectively fabricated carbon nano-tube reversible resistance-switching element and methods of forming the same Physics 5 Active
US8102694B2 Nonvolatile memory device containing carbon or nitrogen doped diode Physics 5 Active
US8450710B2 Low temperature p+ silicon junction material for a non-volatile memory device Electricity 5 Active
US9246092B1 Tunneling barrier creation in MSM stack as a selector device for non-volatile memory application Electricity 4 Active
US6960794B2 Formation of thin channels for TFT devices to ensure low variability of threshold voltages Electricity 4 Expired
US9318531B1 SiC—Si3N4 nanolaminates as a semiconductor for MSM snapback selector devices Physics 4 Active
US7977667B2 Memory cell that includes a carbon nano-tube reversible resistance-switching element and methods of forming the same Physics 4 Active
US8072791B2 Method of making nonvolatile memory device containing carbon or nitrogen doped diode Electricity 4 Active
US8796102B1 Device structure for a RRAM and method Electricity 3 Active
US8501522B2 Intermetal stack for use in a photovoltaic cell Emerging Cross-Sectional Technologies 3 Active
US7935594B2 Damascene process for carbon memory element with MIIM diode Electricity 2 Active
US8049104B2 Intermetal stack for use in a photovoltaic cell Emerging Cross-Sectional Technologies 2 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.