Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios
US7846842B2 · kind B2 · utility
10Cited by
76References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 2, 2009 |
| Grant date | Dec 7, 2010 |
| Priority date | — |
| Expiry date | Feb 4, 2029 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC09G1/02
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
The invention provides a chemical-mechanical polishing composition comprising a cationic abrasive, a cationic polymer, a carboxylic acid, and water. The invention further provides a method of chemically-mechanically polishing a substrate with the aforementioned polishing composition. The polishing composition exhibits selectivity for removal of silicon nitride over removal of silicon oxide.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.