Cluster tool with integrated metrology chamber for transparent substrates
US7846848B2 · kind B2 · utility
24Cited by
55References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 15, 2006 |
| Grant date | Dec 7, 2010 |
| Priority date | — |
| Expiry date | Dec 28, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31116
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The embodiments of the invention relate to a method and apparatus for measuring the etch depth in a semiconductor photomask processing system. In one embodiment, a method for etching a substrate includes etching a transparent substrate in an etch chamber coupled to a vacuum transfer chamber of a processing system, transferring the transparent substrate to a measurement cell coupled to the processing system, and measuring at least one of etch depth or critical dimension using a measurement tool in the measurement cell.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.