Vertical tunneling transistor
US7847282B2 · kind B2 · utility
49Cited by
34References
26Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Aug 13, 2008 |
| Grant date | Dec 7, 2010 |
| Priority date | — |
| Expiry date | Sep 16, 2028 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/943
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
The disclosed embodiments relate to a vertical tunneling transistor that may include a channel disposed on a substrate. A quantum dot may be disposed so that an axis through the channel and the quantum dot is substantially perpendicular to the substrate. A gate may be disposed so that an axis through the channel, the quantum dot and the gate is substantially perpendicular to the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.