Semiconductor device and manufacturing method of semiconductor device
US7847343B2 · kind B2 · utility
3Cited by
8References
3Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 10, 2009 |
| Grant date | Dec 7, 2010 |
| Priority date | — |
| Expiry date | Feb 10, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/2815
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Provided is a nonvolatile semiconductor memory device having a split gate structure, wherein a memory gate is formed over a convex shaped substrate and side surfaces of it is used as a channel. The nonvolatile semiconductor memory device according to the present invention is excellent in read current driving power even if a memory cell is scaled down.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.