Patent · US Active

Overlay measurement target

US7847939B2 · kind B2 · utility

10Cited by
18References
24Claims
0Family size

Assignee

Inventors

Key dates

Filing dateMay 22, 2008
Grant dateDec 7, 2010
Priority date
Expiry dateMay 22, 2028

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/0002
  • WIPO fieldOptics
  • WIPO sectorInstruments

Abstract

In an overlay metrology method used during semiconductor device fabrication, an overlay alignment mark facilitates alignment and/or measurement of alignment error of two layers on a semiconductor wafer structure, or different exposures on the same layer. A target is small enough to be positioned within the active area of a semiconductor device combined with appropriate measurement methods, which result in improved measurement accuracy.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.