Method of reducing number of particles on low-k material layer
US7851030B2 · kind B2 · utility
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3References
14Claims
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Assignee
Inventors
Key dates
| Filing date | Feb 10, 2006 |
| Grant date | Dec 14, 2010 |
| Priority date | — |
| Expiry date | Jan 11, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02126
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of reducing the number of particles on a low-k material layer is described. The low-k material layer is formed by a plasma enhanced chemical vapor deposition process, wherein a reaction gas, a cleaning gas, a high-frequency power and a low-frequency power are used. The method includes turning off the reaction gas and the low-frequency power after the low-k material layer is formed, and continuing to provide the cleaning gas during a delay time.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.