Low temperature amorphous silicon sacrificial layer for controlled adhesion in MEMS devices
US7851239B2 · kind B2 · utility
4Cited by
27References
36Claims
0Family size
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Key dates
| Filing date | Jun 5, 2008 |
| Grant date | Dec 14, 2010 |
| Priority date | — |
| Expiry date | Sep 12, 2028 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/24917
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
Methods of fabricating an electromechanical systems device that mitigate permanent adhesion, or stiction, of the moveable components of the device are provided. The methods provide an amorphous silicon sacrificial layer with improved and reproducible surface roughness. The amorphous silicon sacrificial layers further exhibit excellent adhesion to common materials used in electromechanical systems devices.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.