Nitride based semiconductor optical device, epitaxial wafer for nitride based semiconductor optical device, and method of fabricating semiconductor light-emitting device
US7851243B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 6, 2010 |
| Grant date | Dec 14, 2010 |
| Priority date | — |
| Expiry date | Aug 6, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/825
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
In the nitride based semiconductor optical device LE1, the strained well layers 21 extend along a reference plane SR1 tilting at a tilt angle α from the plane that is orthogonal to a reference axis extending in the direction of the c-axis. The tilt angle α is in the range of greater than 59 degrees to less than 80 degrees or greater than 150 degrees to less than 180 degrees. A gallium nitride based semiconductor layer P is adjacent to a light-emitting layer SP− with a negative piezoelectric field and has a band gap larger than that of a barrier layer. The direction of the piezoelectric field in the well layer W3 is directed in a direction from the n-type layer to the p-type layer, and the piezoelectric field in the gallium nitride based semiconductor layer P is directed in a direction from the p-type layer to the n-type layer. Consequently, the valence band, not the conduction band, has a dip at the interface between the light-emitting layer SP− and the gallium nitride based semiconductor layer P.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.