Yohei Enya
69Patents
6h-index
34Co-inventors
68Inventor score
Filing activity: Apr 3, 2009 → Dec 29, 2021
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US10892596B2 | Optical module | Electricity | 71 | Active |
| US7933303B2 | Group-III nitride semiconductor laser device, and method for fabricating group-III nitride semiconductor laser device | Electricity | 16 | Active |
| US8304793B2 | III-nitride semiconductor optical device and epitaxial substrate | Electricity | 10 | Active |
| US8227277B2 | Group-III nitride semiconductor laser device, and method of fabricating group-III nitride semiconductor laser device | Electricity | 7 | Active |
| US7873088B2 | Group III nitride semiconductor element and epitaxial wafer | Electricity | 6 | Active |
| US8718110B2 | Nitride semiconductor laser and epitaxial substrate | Electricity | 6 | Active |
| US8741674B2 | Group-III nitride semiconductor laser device, and method for fabricating group-III nitride semiconductor laser device | Electricity | 5 | Active |
| US7851821B2 | Group III nitride semiconductor device, epitaxial substrate, and method of fabricating group III nitride semiconductor device | Electricity | 5 | Active |
| US8306082B2 | Group-III nitride semiconductor laser device, and method of fabricating group-III nitride semiconductor laser device | Electricity | 5 | Active |
| US10601200B2 | Optical module | Electricity | 4 | Active |
| US8546163B2 | Group-III nitride semiconductor laser device, and method for fabricating group-III nitride semiconductor laser device | Electricity | 3 | Active |
| US8048702B2 | Method of fabricating nitride-based semiconductor optical device | Electricity | 3 | Active |
| US8476615B2 | GaN-based semiconductor light emitting device and the method for making the same | Electricity | 2 | Active |
| US8927962B2 | Group III nitride semiconductor optical device | Electricity | 2 | Active |
| US7858963B2 | Nitride based semiconductor optical device, epitaxial wafer for nitride based semiconductor optical device, and method of fabricating semiconductor light-emitting device | Electricity | 2 | Active |
| US9977201B2 | Optical module that suppresses stray light | Physics | 2 | Active |
| US8507305B2 | Group-III nitride semiconductor laser device, method of fabricating group-III nitride semiconductor laser device, and epitaxial substrate | Electricity | 2 | Active |
| US9806494B2 | Optical module and method for manufacturing the optical module | Electricity | 2 | Active |
| US8053806B2 | Group III nitride semiconductor device and epitaxial substrate | Electricity | 2 | Active |
| US8488642B2 | Gallium nitride based semiconductor light-emitting device and method for fabricating the same, gallium nitride based light-emitting diode, epitaxial wafer, and method for fabricating gallium nitride light-emitting diode | Electricity | 2 | Active |
| US8207544B2 | Group-III nitride semiconductor device, epitaxial substrate, and method of fabricating group-III nitride semiconductor device | Electricity | 1 | Active |
| US7851243B1 | Nitride based semiconductor optical device, epitaxial wafer for nitride based semiconductor optical device, and method of fabricating semiconductor light-emitting device | Electricity | 1 | Active |
| US8183071B2 | Method for producing nitride semiconductor optical device and epitaxial wafer | Electricity | 1 | Active |
| US8803274B2 | Nitride-based semiconductor light-emitting element | Electricity | 1 | Active |
| US8483251B2 | Group III nitride semiconductor laser diode, and method for producing group III nitride semiconductor laser diode | Electricity | 1 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.