Epitaxial silicon germanium for reduced contact resistance in field-effect transistors
US7851291B2 · kind B2 · utility
8Cited by
14References
5Claims
0Family size
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Key dates
| Filing date | May 26, 2009 |
| Grant date | Dec 14, 2010 |
| Priority date | — |
| Expiry date | May 26, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/822
Abstract
A method for selectively relieving channel stress for n-channel transistors with recessed, epitaxial SiGe source and drain regions is described. This increases the electron mobility for the n-channel transistors without affecting the strain in p-channel transistors. The SiGe provides lower resistance when a silicide is formed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.