Patent · US Active

Method for producing deep trench structures

US7851326B2 · kind B2 · utility

1Cited by

5References

13Claims

0Family size

Assignee

Telefunken Semiconductors GmbH & Co. KG · DE

Inventors

Franz Dietz · Heilbronn, DE
Volker Dudek · Ditzingen, DE
Michael Graf · Leutenbach, DE
Thomas Hoffmann · Leuven, BE

Key dates

Filing date	Jun 18, 2007
Grant date	Dec 14, 2010
Priority date	—
Expiry date	Jul 13, 2028

Classification

Technology area (CPC H)Electricity
CPC primaryH01L21/76224
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method for producing deep trench structures in an STI structure of a semiconductor substrate is provided, with the following successive process steps: subsequent to a full-area filling of STI recesses introduced into a semiconductor substrate with a first filler material, a first surface of a semiconductor structure is subjected to a CMP process to level the applied filler material and produce the STI structure; the leveled STI structure thus produced is structured; using the structured, leveled STI structure as a hard mask, at least one deep trench is etched in the area of this STI structure to create the deep trench structures.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.