In-situ formation of conductive filling material in through-silicon via
US7851342B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 30, 2007 |
| Grant date | Dec 14, 2010 |
| Priority date | — |
| Expiry date | May 11, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/283
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The formation of electronic assemblies including a die having through vias is described. In one embodiment, a method includes providing Si die including a first surface and a second surface opposite the first surface, and forming a via extending through the Si die from the first surface to the second surface. The via is formed to have a larger width at the first surface than at the second surface, the larger width at the first surface being no less than 100 microns. The method also includes placing a plurality of particles in the via, wherein at least some of the particles comprise a polymer and at least some of the particles comprise a metal. The method also includes heating the die and the particles in the via to cross-link at least part of the polymer in the via, and cooling the die to solidify the polymer and form a electrically conductive composite including the cross-linked polymer and the metal in the via. Other embodiments are described and claimed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.