Methods of forming ohmic layers through ablation capping layers
US7851343B2 · kind B2 · utility
3Cited by
7References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 14, 2007 |
| Grant date | Dec 14, 2010 |
| Priority date | — |
| Expiry date | Mar 16, 2028 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/931
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming an ohmic layer for a semiconductor device includes forming a metal layer on a Silicon Carbide (SiC) layer and forming an ablation capping layer on the metal layer. Laser light is impinged through the ablation capping layer to form a metal-SiC material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.