Patent · US Active

Method for producing a connection electrode for two semiconductor zones arranged one above another

US7851349B2 · kind B2 · utility

11Cited by

3References

11Claims

0Family size

Assignee

Infineon Technologies Austria AG · AT

Inventors

Walter Rieger · Arnoldstein, AT
Paul Ganitzer · Villach, AT
Oliver Haeberlen · Villach, AT
Franz Hirler · Isen, DE
Markus Zundel · Egmating, DE
Rudolf Zelsacher · Klagenfurt, AT
Erwin Bacher · Villach, AT

Key dates

Filing date	Sep 26, 2006
Grant date	Dec 14, 2010
Priority date	—
Expiry date	Jul 3, 2027

Classification

Technology area (CPC H)Electricity
CPC primaryH10D64/62
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method for producing a connection electrode for a first semiconductor zone and a second semiconductor zone includes producing a trench extending through the first semiconductor zone right into the second semiconductor zone in such a way that the first semiconductor zone is uncovered at sidewalls of the trench and the second semiconductor zone is uncovered at least at a bottom of the trench. The method also includes applying a protective layer to a first one of the first and second semiconductor zones in the trench, and producing a first connection zone in the second of the two semiconductor zones, which is not covered by the protective layer. The method further includes depositing an electrode layer at least onto the sidewalls and the bottom of the trench for the purpose of producing the connection electrode.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.