Patent · US Active

Method for reducing an unevenness of a surface and method for making a semiconductor device

US7851362B2 · kind B2 · utility

0Cited by

7References

24Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Joern Plagmann · Munich, DE
Holger Poehle · Taufkirchen, DE

Key dates

Filing date	Feb 11, 2008
Grant date	Dec 14, 2010
Priority date	—
Expiry date	Apr 18, 2028

Classification

Technology area (CPC H)Electricity
CPC primaryH01L21/7624
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

In order to reduce an unevenness of a surface of a body, a sacrificial layer is applied to the surface, a chemical-mechanical polishing of the sacrificial layer and material of said body is performed to reduce the unevenness of the surface, and a remainder of the sacrificial layer, if any, may be removed.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.