Method for plasma processing a substrate
US7851367B2 · kind B2 · utility
3Cited by
3References
10Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Mar 15, 2007 |
| Grant date | Dec 14, 2010 |
| Priority date | — |
| Expiry date | Jan 4, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32091
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A substrate plasma processing apparatus includes a chamber of which an interior is evacuated under a predetermined vacuum condition; an RF electrode which is disposed in the chamber and configured so as to hold a substrate to be processed on a main surface thereof; an opposing electrode which is disposed opposite to the RF electrode in the chamber; an RF voltage applying device for applying an RF voltage with a predetermined frequency to the RF electrode; and a pulsed voltage applying device for applying a pulsed voltage to the RF electrode so as to be superimposed with the RF voltage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.