Process for atomic layer deposition
US7851380B2 · kind B2 · utility
6Cited by
4References
23Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 26, 2007 |
| Grant date | Dec 14, 2010 |
| Priority date | — |
| Expiry date | Sep 19, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/40
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The present invention relates to a process of making thin film electronic components and devices, such as thin film transistors, environmental barrier layers, capacitors, insulators and bus lines, where most or all of the layers are made by an atmospheric atomic layer deposition process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.