Schottky barrier diode (SBD) and its off-shoot merged PN/Schottky diode or junction barrier Schottky (JBS) diode
US7851881B1 · kind B1 · utility
51Cited by
9References
33Claims
0Family size
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Key dates
| Filing date | Feb 3, 2009 |
| Grant date | Dec 14, 2010 |
| Priority date | — |
| Expiry date | Feb 3, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/12032
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A merged PN/Schottky diode is provided having a substrate of a first conductivity type and a grid of doped wells of the second conductivity type embedded in the substrate. A Schottky barrier metal layer makes a Schottky barrier contact with the surface of the substrate above the grid. Selected embedded wells in the grid make a Schottky barrier contact to the Schottky barrier metal layer, while most embedded wells do not. The diode forward voltage drop is reduced for the same diode area with reverse blocking benefits similar to a conventional JBS structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.