Silicon carbide semiconductor device having junction barrier schottky diode
US7851882B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 1, 2008 |
| Grant date | Dec 14, 2010 |
| Priority date | — |
| Expiry date | Feb 11, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/126
Abstract
A silicon carbide semiconductor device includes a drift layer having first conductive type on a substrate, a cell region in the drift layer, a schottky electrode on the drift layer and multiple second conductive type layers in the cell region. The second conductive type layers are separated from each other and contact the schottky electrode. A size and an impurity concentration of the second conductive type layers and a size and an impurity concentration of a portion of the drift layer sandwiched between the second conductive type layers are determined so that a charge quantity of the second conductive type layers is equal to a charge quantity of the portion. Hereby, the pressure-proof JBS and low resistivity second conductive type layers arranged on a surface of the drift layer to provide a PN diode, can be obtained.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.