Electronic component comprising a titanium carbonitride (TiCN) barrier layer and process of making the same

US7851915B2 · kind B2 · utility

Assignee

• STMicroelectronics SA

Inventors

• Pierre Caubet · Le Versoud, FR
• Rym Benaboud · Marigot, FR

Key dates

• Filing date: Apr 30, 2008
• Grant date: Dec 14, 2010
• Expiry date: Jul 31, 2028

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/28562
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

An electronic component comprising several superimposed layers of materials including a TiCN barrier layer. A process for depositing a TiCN layer in order to obtain an electronic component, where a titanium precursor is chosen from among tetrakis(dimethylamido)titanium and/or tetrakis(diethylamido)titanium and is decomposed on a substrate by plasma-enhanced atomic layer deposition (PEALD) where the plasma is obtained with a hydrogen-rich gas which can contain nitrogen with at most 5 atomic % nitrogen and at least 95 atomic % hydrogen.