Semiconductor device having substrate with differentially plated copper and selective solder
US7851928B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 10, 2008 |
| Grant date | Dec 14, 2010 |
| Priority date | — |
| Expiry date | Jun 30, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05K2203/0733
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device having an insulating substrate with differentially plated metal and selective solder. Chip 221 with contact studs 223 is attached onto the traces 203 on tape 101. The traces, which are unprotected by soldermask 110, have solder on the top surface, but not on the sidewalls. The sidewalls of the traces are at right angles to the trace top, giving the trace a rectangular cross section. Consequently, the area for attaching stud 223 is maximized. At the same time, the differential plating method of trace metal 203 and through-hole metal 206 allows different metal thicknesses and provides independent control of the trace aspect ratio for low electrical resistance and trace fatigue.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.