Division-based sensing and partitioning of electronic memory
US7852669B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Mar 16, 2007 |
| Grant date | Dec 14, 2010 |
| Priority date | — |
| Expiry date | Apr 5, 2028 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2211/5634
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Providing distinction between overlapping threshold levels of one or more multi-cell memory devices is described herein. By way of example, a system can include a sensing component that can measure a level associated with a first memory cell. The system can also include a comparison component that can compare the measured level associated with the first memory cell level to non-overlapping threshold levels, wherein such measurement can be used to determine a unique bit level associated with a second memory cell. By way of further example, methodologies are described for accurately measuring a bit level of a first cell of a dual-cell memory device, by comparing a second cell value to non-overlapping threshold values, as measured with respect to the second reference point.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.