Method of using hot-carrier-injection degradation as a programmable fuse/switch
US7852677B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 25, 2007 |
| Grant date | Dec 14, 2010 |
| Priority date | — |
| Expiry date | May 31, 2028 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/10
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Method and apparatus for providing nonvolatile storage with a programmable transistor. The method includes receiving a data value to be stored in the programmable transistor and programming the programmable transistor to store the received data value. Programming includes applying a selected voltage to the programmable transistor. The selected voltage is selected to inject carriers into a gate oxide layer of the programmable transistor. The carriers are maintained in the gate oxide layer of the programmable transistor in the absence of the selected voltage, thereby programming the programmable transistor with the received data value.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.