Vertical cavity surface emitting laser
US7852896B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 8, 2009 |
| Grant date | Dec 14, 2010 |
| Priority date | — |
| Expiry date | Jul 30, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2301/176
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A VCSEL includes a GaAs substrate; a first semiconductor distributed Bragg reflector (DBR) disposed on the GaAs substrate and including a first part and a second part on the first part; a semiconductor mesa disposed on the first semiconductor DBR and including an active layer; and a second DBR on the semiconductor mesa. The first part is composed of an undoped semiconductor material. The second part includes third III-V compound semiconductor layers composed of a material containing indium and gallium as the group III element and phosphorus as the group V element and fourth III-V compound semiconductor layers composed of a material containing gallium as the group III element and arsenic as the group V element. The third III-V compound semiconductor layers and the fourth III-V compound semiconductor layers are doped with an n-type impurity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.