Method for fabricating semiconductor memory device
US7855113B2 · kind B2 · utility
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2References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 22, 2009 |
| Grant date | Dec 21, 2010 |
| Priority date | — |
| Expiry date | Aug 4, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/485
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for fabricating a semiconductor memory device includes: forming a lower conductive layer over a semiconductor substrate; forming an insulation layer over the lower conductive layer; etching the insulation layer to form a contact hole that exposes a portion of the lower conductive layer; forming a contact plug in the contact hole; doping the contact plug by performing a plasma doping process while varying a temperature of regions the semiconductor substrate; and forming an upper conductive layer connected with the lower conductive layer through the contact plug.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.