Method of forming metal lines and bumps for semiconductor devices
US7855144B2 · kind B2 · utility
4Cited by
2References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 31, 2006 |
| Grant date | Dec 21, 2010 |
| Priority date | — |
| Expiry date | Oct 20, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/19041
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided is a method of forming conductors (e.g., metal lines and/or bumps) for semiconductor devices and conductors formed from the same. First and second seed metal layers may be formed. At least one mask may be formed on a portion on which a conductor is to be formed. An exposed portion may be oxidized. The oxidized portion may be removed. A conductive structure may be formed on an upper surface of a portion which is not oxidized. The conductors may be metal lines and/or bumps. The conductive structures may be solder balls.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.