SIC semiconductor device and method for manufacturing the same
US7855384B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Apr 10, 2007 |
| Grant date | Dec 21, 2010 |
| Priority date | — |
| Expiry date | Mar 28, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/343
Abstract
A SiC semiconductor device includes: a SiC substrate having a drain layer, a drift layer and a source layer stacked in this order; multiple trenches penetrating the source layer and reaching the drift layer; a gate layer on a sidewall of each trench; an insulation film on the sidewall of each trench covering the gate layer; a source electrode on the source layer; and a diode portion in or under the trench contacting the drift layer to provide a diode. The drift layer between the gate layer on the sidewalls of adjacent two trenches provides a channel region. The diode portion is coupled with the source electrode, and insulated from the gate layer with the insulation film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.